epitaxial process
英
美
网络 外延工艺
双语例句
- SPV Application in Silicon Epitaxial Process
表面光电压技术在Si外延过程中的应用 - Epitaxial process and factors affecting property of the material were discussed.
讨论了外延工艺和影响材料性质的因素。 - Its rapid development benefits from improved epitaxial technology, full compatibility with silicon process, especially with existing CMOS process, and huge demands from microwave/ RF communication markets.
它的快速发展首先得益于外延技术的提高，其次是它与硅工艺完全兼容，特别是与CMOS工艺兼容的特性，以及微波/射频通讯市场的巨大需求。 - In this study, SiGe HBT MMIC research was done for the first time in China. A series of efforts was made on SiGe HBT MMIC including UHV/ CVD SiGe epitaxial machine, SiGe film characteristics, process improvements, circuit design and fabrication.
本论文在国内首先进行了SiGeHBT微波单片放大电路的研究，开展了从外延设备、材料特性、工艺改进到电路设计和制作的一系列研究工作。 - High quality Hg_ ( 1-x) Cd_xTe epitaxial layers by the organometallic process
用有机金属法生长的高质量Hg（1-x）CdxTe外延层 - This method is appropriate for rapid characterization of silicon epitaxial layers in the automatic production process.
这种方法适合于外延片生产自动化过程中的快速测量。 - In this paper, a vapor phase growth technique of PN/ N+ multilayer submicron epitaxial material for 3 mm waveband Si DDR IMPATT diodes is pre-sented. The approaches to obtain these high quality multilayer structures are studied. The optimum epitaxial process conditions have been established.
报导了3mm波段硅双漂移崩越二极管所需PN/N~+多层、亚微米外延材料的常规CVD生长技术，研究了实现这些高要求的多层结构的方法，得到了最佳的外延工艺条件。 - The formation of liquid phase is favorable to enhance the wettability between the precursor film and substrate and promote the epitaxial growth of the precursor film. Also, little liquid phase can make up part of the micro-holes amd microcracks formed in pyrolysis process.
液相的生成有利于增强前驱膜与基片之间的浸润性并促进其外延生长，同时液相能够弥合分解过程中形成的部分微裂纹和微孔。 - Computational modeling and simulation of epitaxial growth process is a frontier domain in the field of manufactory science and material science. Phase-field method as a powerful tool is used to describe complex phase transitions in non-equilibrium state.
材料生长过程的计算机模拟和仿真是当今国际公认的制造科学与材料科学的前沿领域之一，而相场法是一种用于描述非平衡态下复杂相界面演变的强有力工具。 - External quantum efficiency is low in the current situation, and this paper presents two aspects to improve this defect: the epitaxial process and chip process using the new GaN-based LED structure, and gets better results.
针对目前LED外量子效率不高的现状，本论文提出从外延工艺和芯片制程两个方面采用新型GaN基LED结构，来改善这一缺陷，并得到较好的结果。